Single N-Channel Advanced Power MOSFET 100V/40A
100V/40A, RDS (ON) =20mΩ(Typ.)@VGS=10V,RDS (ON) =22mΩ(Typ.)@VGS=4.5V,Limited by TJmax, IAS =18A, L=0.5mH, VDD = 48V, RG = 25Ω , Starting TJ = 25°C.Pulse width≤300µs, duty cycle≤2%.