Single N-Channel Advanced Power MOSFET -20V/-3A
(-20V/-3A),RDS (ON) =70mΩ(Typ.)@VGS=-4.5V, RDS (ON) =100mΩ(Typ.)@VGS=-2.5V, Limited by TJmax. Starting TJ = 25°C.Pulse width≤300µs, duty cycle≤2%.
Bipolar Transistors - Pre-Biased Sgle PNP, 50V 100mA 250MHz 200mW