Single N-Channel Advanced Power MOSFET -40V/-10A
(-40V/-10A),RDS (ON) =16mΩ(Typ.)@VGS=-10V,RDS (ON) =21mΩ(Typ.)@VGS=-4.5V,Limited by TJmax. Starting TJ = 25°C.Pulse width≤300µs, duty cycle≤2%.
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