Single P-Channel Advanced Power MOSFET -30V/-5.2A
(-30V/-5.2A),RDS (ON) =38mΩ(Typ.)@VGS=-10V,RDS (ON) =60mΩ(Typ.)@VGS=-4.5V,Limited by TJmax. Starting TJ = 25°C.Pulse width≤300µs, duty cycle≤2%.
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