Single N-Channel Advanced Power MOSFET 60V/25A
60V/25A,RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =34mΩ(Typ.)@VGS=4.5V,Low RDS (ON),Limited by TJmax, IAS =8A, L=0.5mH, VDD = 30V, RG = 25Ω , Starting TJ = 25°C,Pulse test;Pulse width≤300µs, duty cycle≤2%.