Single N-Channel Advanced Power MOSFET 80V/100A
80V/100A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V, Limited by TJmax,IAS =48A, L=0.5mH, VDD = 48V, RG = 25Ω , Starting TJ = 25°C. Pulse width≤300µs, duty cycle≤2%.
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