Single N-Channel Advanced Power MOSFET 100V/120A
100V/120A, RDS (ON) =7mΩ(Typ.)@VGS=10V,Low RDS (ON),Limited by TJmax, IAS =63A, L=0.5mH, VDD = 48V, RG = 25Ω , Starting TJ = 25°C,Pulse test;Pulse width≤300µs, duty cycle≤2%.