توضیحات کامل
Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 900 V Id - Continuous Drain Current: 2.5 A Rds On - Drain-Source Resistance: 5.6 Ohms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 12 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 40 W Channel Mode: Enhancement Packaging: Tube Configuration: Single Height: 15 mm Length: 10 mm Series: 2SK3566 Transistor Type: 1 N-Channel Width: 4.5 mm Brand: Toshiba Forward Transconductance - Min: 2 S Fall Time: 30 ns Product Type: MOSFET Rise Time: 20 ns
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